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  ? 1/6 table 1: main product characteristics i f(av) 0.5 a v rrm 20 v t j (max) 150c v f (max) 0.30 v stps0520m low drop power s chottky rectifier rev. 3 table 3: absolute ratings (limiting values) symbol parameter value unit v rrm repetitive peak reverse voltage 20 v i f(rms) rms forward voltage 2 a i f(av) average forward current t c = 140c = 0.5 0.5 a i fsm surge non repetitive forward current 10 ms sinusoidal 5.5 a p arm repetitive peak avalanche power tp = 1s tj = 25c 1400 w t stg storage temperature range -65 to + 150 c t j maximum operating junction temperature * 150 c dv/dt critical rate of rise of reverse voltage (rated v r , t j = 25c) 10000 v/s * : thermal runaway condition for a diode on its own heatsink dptot dtj --------------- 1 rth j a ? () ------------------------- - > c a stmite (do216-aa) september 2004 features and benefits very small conduction losses negligible switching losses extremely fast switching low forward voltage drop for higher efficiency and extented battery life low thermal resistance avalanche capability specified description single schottky rectifier suited for switch mode power supplies and high frequency dc to dc converters. packaged in stmite, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. due to the small size of the package this device fits battery powered equipment (cellular, notebook, pda?s, printers) as well chargers and pcmcia cards. table 2: order code part number marking stps0520m 052
stps0520m 2/6 table 4: thermal resistance * mounted with minimum recommended pad size, pc board fr4. table 5: static electrical characteristics pulse test: * tp = 380 s, < 2% to evaluate the conduction losses use the following equation: p = 0.34 x i f(av) + 0.07 i f 2 (rms) symbol parameter value unit r th(j-c) * junction to case 20 c/w r th(j-l) * junction to ambient 250 c/w symbol parameter tests conditions min. typ max. unit i r * reverse leakage current t j = 25c v r = v rrm 15 50 a t j = 100c 26 ma t j = 25c v r = 10v 725 a t j = 100c 13 ma v f * forward voltage drop t j = 25c i f = 1a 0.30 0.33 v t j = 100c 0.195 0.23 t j = 25c i f = 0.5a 0.35 0.385 t j = 100c 0.26 0.30 figure 1: conduction losses versus average current figure 2: average forward current versus ambient temperature ( = 0.5) 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 = 0.05 = 0.1 = 0.2 = 0.5 = 1 t =tp/t tp p (w) f(av) i (a) f(av) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0 25 50 75 100 125 150 i (a) f(av) r=r th(j-a) th(j-c) r =270c/w th(j-a) t (c) amb
stps0520m 3/6 figure 3: normalized avalanche power derating versus pulse duration figure 4: normalized avalanche power derating versus junction temperature figure 5: non repetitive surge peak forward current versus overload duration (maximum values) figure 6: relative variation of thermal impedance junction to ambient versus pulse duration figure 7: reverse leakage current versus reverse voltage applied (typical values) figure 8: reverse leakage current versus junction temperature (typical values) 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (s) p p(t) p (1s) arm p arm 0 0.2 0.4 0.6 0.8 1 1.2 25 50 75 100 125 150 t (c) j p(t) p (25c) arm p arm 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 1.e-03 1.e-02 1.e-01 1.e+00 i m t =0.5 i (a) m t(s) t =25c c t =75c c t =125c c 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-04 1.e-03 1.e-02 1.e-01 = 0.5 = 0.2 = 0.1 single pulse t =tp/t tp z/r th(j-c) th(j-c) t (s) p 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 0 2 4 6 8 101214161820 i (ma) r v (v) r t =125c j t =150c j t =100c j t =50c j t =25c j t =75c j 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 0 25 50 75 100 125 150 i (ma) r t (c) j v =20v r
stps0520m 4/6 figure 9: junction capacitance versus reverse voltage applied (typical values) figure 10: forward voltage drop versus forward current figure 11: thermal resistance junction to ambient versus copper surface under tab (epoxy printed board fr4, cu = 35m, typical values) 10 100 1000 1 10 100 c(pf) v (v) r f=1mhz v =30mv t =25c osc rms j 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 i (a) fm v (v) fm t =25c (maximum values) j t =100c (maximum values) j t =100c (typical values) j 0 50 100 150 200 250 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 r (c/w) th(j-a) s(cm2) p=0.6w
stps0520m 5/6 figure 12: stmite package mechanical data figure 13: foot print dimensions (in millimeters) c l2 l a1 r1 r 0 to 6 b h b2 d l3 a e 1.82 2.03 1.10 0.50 1.38 0.75 0.71 ref. dimensions millimeters inches min. typ. max. min. typ. max. a 0.85 1.00 1.15 0.033 0.039 0.045 a1 -0.05 0.05 -0.002 0.002 b 0.40 0.65 0.016 0.025 b2 0.70 1.00 0.027 0.039 c 0.10 0.25 0.004 0.010 d 1.75 1.90 2.05 0.069 0.007 0.081 e 1.75 1.90 2.05 0.069 0.007 0.081 h 3.60 3.75 3.90 0.142 0.148 0.154 l 0.50 0.63 0.80 0.020 0.025 0.031 l2 1.20 1.35 1.50 0.047 0.053 0.059 l3 0.50 ref 0.019 ref r 0.07 0.003 r1 0.07 0.003 table 6: ordering information ordering type marking package weight base qty delivery mode stps0520m 052 stmite 15.5 mg 12000 tape & reel table 7: revision history date revision description of changes jul-2003 2a last update. 13-sep-2004 3 stmite package dimensions reference a1 change: from blank (min) to -0.05mm and from 0.10 (max) to 0.05mm.
stps0520m 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assu mes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replac es all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered tr ademark of stmicroelectronics. all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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